纳米二氧化硅/硅异质结的表面光伏特性

采用溶胶 -凝胶法在P型单晶硅的表面镀上一层纳米二氧化硅薄膜 ,应用表面光电压谱 (SPS)、漫反射光谱 (DRS)和傅里叶红外光谱 (FTIR)研究其室温下的光伏、光吸收特性 .结果表明 :在单晶硅表面镀上一层纳米二氧化硅薄膜后 ,漫反射吸收系数F(R)比单晶硅提高了约 5 0 % ,相应的光电压信号提高了约两个数量级 .在 40 0～ 80 0℃热处理温度范围内随着温度的升高 ,纳米复合材料SiO2 /Si的光伏效应增强 ,红外光谱中的Si-O键振动吸收峰降低 ,二氧化硅薄膜中欠氧状态加剧 .

Surface photovoltaic properties of heterojunction of SiO2/Si

A nano-sized thin film of SiO2 was coated on the surface of asilicon substrate with improved sol-gel method. The properties of the photovoltaic effectand vis-nir adsorption were characterized by surface photovoltage spectroscope (SPS)，diffuse reflection spectrum (DRS) and Fourier transform infrared spectrum (FTIR). The results showed that the photovoltage of SiO2/Si was enhanced by two orders of magnitude，and that the absorption coefficient of diffuse reflection spectrum F(R) was increased about 50% as compared to those of Si samples. In the range of 400℃ to 700℃，the photovoltaic effect of SiO2/Si was increased and the absorption of Si-O vibration in the FTIR was decreased with increasing calcination temperature， owing to intensification of oxygen deficiency in the thin film coated on the surface of silicon substrate.