磁控溅射沉积TiN薄膜工艺优化

磁控溅射TiN薄膜的力学和腐蚀性能与薄膜的结构密切相关,而其结构又取决于薄膜的制备工艺.采用正交实验方法对影响TiN薄膜结构和性能的重要参数如电流、负偏压、氮流量和基体温度等进行优化,以期获得更优的制备工艺条件.实验结果显示,其对TiN薄膜纳米硬度影响由大到小的次序为：基体温度＞负偏压＞电流＞氮流量;对膜/基结合力的影响由大到小的顺序为：基体温度＞氮流量＞电流＞负偏压.综合考虑TiN薄膜的纳米硬度和膜/基结合力,获得的最优方案为：基体温度300℃,电流0.2A,负偏压-85 V,标准状态下氮流量4 mL/min.

Process Optimization of TiN Thin Films Prepared by Magnetron Sputtering

The mechanical and corrosion properties of TiN thin films prepared by magnetron sputtering depend strongly on their microstructural characteristics, which are greatly affected by the processing parameters. The orthogonal design method is employed with an aim of improving preparation process conditions such as substrate temperature, current, bias voltage and N2 flow, of I）（2 reactive magnetron sputtered TiN films. The experimental results show that the effect of process parameters on film nanohardness from large to small is substrate temperature〉 bias voltage〉current 〉N2 flow, while that on film/substrate adhesion is substrate temperature〉N2 flow〉current〉bias voltage. An optimized process is obtained with substrate temperature 300 ℃, current 0. 2 A, bias voltage -85 V, and N2 flow 4 mL/min.