静电放电作用下双极型硅半导体晶体管仿真分析

为了研究静电放电对双极型硅晶体管的损伤机理，针对典型的NPN结构的双极型晶体管，运用Medici仿真软件建立了器件的仿真模型。从器件内部电流、电势、电场强度和电流密度分布变化的分析出发，研究了在静电放电电磁脉冲作用下其内在损伤过程与机理。通过仿真分析，一方面验证了该类器件对ESD最敏感的端对为CB结，而不是EB结。另一方面发现ESD对该类器件的损伤主要是过热损伤模式，损伤机理为热二次击穿。但两者机理有所不同：对于高掺杂的发射结反偏时先是发生了齐纳击穿，而后发生雪崩击穿，属于软击穿；而低掺杂的集电结反偏时只是发生了雪崩击穿，属于硬击穿。

The Simulation Analysis of Bipolar Silicon Transister Under the Action of ESD

In order to study the electrostatic discharge damage mechanism of bipolar silicon transistors, we use the simulation software Medici to establish the simulation model of the typical NPN structure bipolar transistor. Analysis the variation of the device internal current, electric potential, electric field strength and the current density, we study its internal process and mechanism in the effect of electrostatic discharge electromagnetic pulse. Through simulation analysis, the validation of this kind of devices for ESD the most sensitive end is CB junction, rather than the EB junction. On the other hand, it has been proved that thermal breakdown is the main failure mode of those devices, the damage mechanism is thermal second breakdown . But the mechanism is different .For the highly doped emitter junction, zener breakdown occurs first and then avalanche breakdown, it belongs to the soft breakdown. For the low doped collector junction, it just happens avalanche breakdown, it belongs to the hard breakdown.