| VDMOS-NMOS兼容功率集成电路结构 |
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| 引用本文： | 刘三清,曹广军,应建华,徐彦忠. VDMOS-NMOS兼容功率集成电路结构[J]. 华中科技大学学报(自然科学版), 1997, 0(5) |
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| 作者姓名： | 刘三清 曹广军 应建华 徐彦忠 |
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| 作者单位： | 华中理工大学固体电子学系 |
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| 摘 要： | 提出一种完全新型的ＶＤＭＯＳ－ＮＭＯＳ全兼容功率集成结构的设计方法．该结构采用与ＶＤＭＯＳ工艺兼容的对接（ＢｕｔＪｏｉｎｔ）沟道结构形成ＮＭＯＳ器件，利用ＶＤＭＯＳ工艺中ｐ＋区反刻过程形成ＮＭＯＳ器件的有源区，利用ＶＤＭＯＳ工艺中刻双扩散窗口过程形成ＮＭＯＳ器件的栅区及多晶硅互连线．对ＭＯＳ电路中的小跨导器件图形的设计及ＶＤＭＯＳ与Ｅ／ＥＭＯＳ的界面设计进行了分析和讨论
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| 关 键 词： | 功率集成电路；对接沟道；兼容；单片集成 |
A VDMOS NMOS Compatible Power Integrated Circuit Structure |
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| Liu Sanqing Dept. of Solid State Electronics,HUST,Wuhan ,China. Cao Guangjun Ying Jianhua Xu Yanzhong. A VDMOS NMOS Compatible Power Integrated Circuit Structure[J]. JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE, 1997, 0(5) |
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| Authors: | Liu Sanqing Dept. of Solid State Electronics HUST Wuhan China. Cao Guangjun Ying Jianhua Xu Yanzhong |
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| Affiliation: | Liu Sanqing Dept. of Solid State Electronics,HUST,Wuhan 430074,China. Cao Guangjun Ying Jianhua Xu Yanzhong |
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| Abstract: | The design ideas of a brand new VDMOS NMOS compatible power integrated circuit structure is proposed. The butt joint channel structure compatible with VDMOS processing is used to form the NMOS devices and the active regions are formed during the negative etching of p + region of VDMOS. When the double diffusion windows of the VDMOS are etched, the gates and the poly Si connections are formed. With this structure, the monolithic chip integration of the VDMOS device with E/EMOS circuit can be realized through the standard processing for VDMOS and the NMOS circuit pattern can be designed with the normal layout rules for the poly Si gate NMOS structure. Analysis and discussion are also made on the pattern of the small transconductance device in the NMOS circuit as well as on the interface design of the VDMOS device and the E/EMOS circuit. |
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| Keywords: | power integrated circuit butt joint channel compatible monolithic integration |
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