| 不同类型双极晶体管的低剂量率辐射损伤增强效应损伤机制 |
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| 引用本文： | 王先明,刘楚湘,魏蔚. 不同类型双极晶体管的低剂量率辐射损伤增强效应损伤机制[J]. 新疆师范大学学报(自然科学版), 2005, 24(4): 32-35 |
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| 作者姓名： | 王先明 刘楚湘 魏蔚 |
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| 作者单位： | 新疆师范大学,数理信息学院,新疆,乌鲁木齐,830054 |
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| 摘 要： | 文章研究了双极晶体管不同温度的低剂量率辐射损伤增强效应，发现NPN晶体管与PNP晶体管的低剂量率辐射损伤机翻是不相同的．最后文章讨论了其中可能的内在机制。
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| 关 键 词： | 双极晶体管 ELDRS 低剂量率辐射损伤增强效应 |
| 文章编号： | 1008-9659-(2005)-04-0032-04 |
| 收稿时间： | 2004-12-22 |
| 修稿时间： | 2004-12-22 |
The Mechanism of Different Type Bipolar Transistors Enhanced Low Does Rate Sensitivity |
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| WANG Xianming,LIU Chuxiang,WEI Wei. The Mechanism of Different Type Bipolar Transistors Enhanced Low Does Rate Sensitivity[J]. Journal of Xinjiang Normal University(Natural Sciences Edition), 2005, 24(4): 32-35 |
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| Authors: | WANG Xianming LIU Chuxiang WEI Wei |
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| Affiliation: | School of Maths-physics and Information Sciences,Xinjiang Normal university,Urumqi 830054 |
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| Abstract: | The article investigate the enhanced low dose rate sensitivity of the homemade bipolar transistors in different temperature. We find that the damage-mechanism of the enhanced low dose rate sensitivity between NPN transistors and PNP transistors is distinct. Possible mechanisms are discussed in the end. |
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| Keywords: | bipolar transistor ELDRS enhanced low dose rate sensitivity |
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