| 位置敏感日盲深紫外光电探测器 |
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| 引用本文： | 廖梅勇.位置敏感日盲深紫外光电探测器[J].中国科学:物理学 力学 天文学,2021(2). |
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| 作者姓名： | 廖梅勇 |
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| 作者单位： | 日本国立材料研究所功能材料研究中心 |
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| 摘 要： | 超宽禁带半导体β-Ga2O3的带隙约为4.9 eV,是理想的日盲深紫外光电探测材料.最近,研究者利用β-Ga2O3薄膜,成功研制了四象限结构位置敏感日盲深紫外光电探测器.该研究为Ga2O3在深紫外光、X射线定位或成像等领域的实际应用提供了思路.
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| 关 键 词： | 光电导 超宽禁带半导体 位置敏感探测器 |
Position-sensitive solar-blind deep-ultraviolet detectors |
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| LIAO MeiYong.Position-sensitive solar-blind deep-ultraviolet detectors[J].Scientia Sinica Pysica,Mechanica & Astronomica,2021(2). |
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| Authors: | LIAO MeiYong |
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| Institution: | (Research Center for Functional Materials,National Institute for Materials Science(NIMS),Ibaraki 305-0044,Japan) |
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| Abstract: | β-Ga2O3 is a direct ultra-wide bandgap semiconductor with an energy gap of 4.9 eV,which can serve as the ideal candidate for solar-blind deep-ultraviolet(DUV)detection.Despite the extensive research in Ga2O3 detectors,the positive sensitive ones have not been reported yet.Recently,researchers demonstrated the position sensitive solar-blind DUV photodetector by using theβ-Ga2O3 thin film as an active layer.The photodetectors have high uniformity,fast response,and high DUV/visible rejection ratio.The DUV detector was successfully utilized to align the light beam.This work favors the applications ofβ-Ga2O3 in DUV or X-ray beam alignment or imaging. |
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| Keywords: | photoconductivity ultra-wide bandgap semiconductor position-sensitive detector |
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