| 等离子体增强CVD氧化硅和氮化硅 |
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| 引用本文： | 毛赣如 刘凌. 等离子体增强CVD氧化硅和氮化硅[J]. 天津大学学报(自然科学与工程技术版), 1995, 28(4): 563-566 |
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| 作者姓名： | 毛赣如 刘凌 |
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| 摘 要： | 利用红外吸收谱等微观分析对氧化硅和氮化硅薄膜的成分和结构进行了研究。采用高频Ｃ－Ｖ测试和准静态离子电流法测量了氧化硅、氮化硅及其复合膜的界面特性，结果表明ＰＥＣＶＤＳｉＯ２－ＳｉＮ双层结构的复合膜对半导体器件表面有良好的钝化效果。
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| 关 键 词： | 氧化硅 氮化硅 CVD 半导体薄膜 等离子沉积 |
STUDY OF PLASMA-ENHANCED CVD SILICON OXIDE AND SILICON NITRIDE |
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| Mao Ganru,Liu Ling, Tian Ruifen. STUDY OF PLASMA-ENHANCED CVD SILICON OXIDE AND SILICON NITRIDE[J]. Journal of Tianjin University(Science and Technology), 1995, 28(4): 563-566 |
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| Authors: | Mao Ganru Liu Ling Tian Ruifen |
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| Affiliation: | Dept.of Electronic Engineering |
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| Abstract: | This paper describes the study on the component and structure of the silicon oxide and silicon nitride films by infra-red absorbed spectrum.The interface characteristics of the films have been measured by means of high frequency C-V and sub-static ion current.The experimental results show that the PECVD SiO2-SiN composite films have excellent passive effect for the semiconductor device surface. |
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| Keywords: | silicon oxide silicon nitride composite film passivation |
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