| GaAs非本征吸收 |
| |
| 引用本文： | 吴明和,刘鸿,杨宏春,王玉明,薛长江. GaAs非本征吸收[J]. 成都大学学报(自然科学版), 2005, 24(1): 8-10 |
| |
| 作者姓名： | 吴明和 刘鸿 杨宏春 王玉明 薛长江 |
| |
| 作者单位： | 电子科技大学,物理电子学院,成都,610054;成都大学,电子信息工程系,成都,610106 |
| |
| 基金项目： | 预研基金(51407030303DZ0206)资助 |
| |
| 摘 要： | 对光脉冲入射波长为1064nm时,GaAs光导开关上的直流电场为103V/cm观察到光电流的现象运用非本征吸收光电导理论进行了解释,讨论了恒定光强和高斯光强时,GaAs非本征吸收载流子浓度随时间的变化,并将高斯光强时的模拟结果同光导开关实验相比较,二者吻合很好
|
| 关 键 词： | 非本征吸收 光生载流子 光激发 俘获效应 |
| 文章编号： | 1004-5422(2005)01-0008-03 |
Impurity Absorption of GaAs Semiconductor |
| |
| Impurity Absorption of GaAs Semiconductor,WANG Yuming,XUE Changjiang. Impurity Absorption of GaAs Semiconductor[J]. Journal of Chengdu University (Natural Science), 2005, 24(1): 8-10 |
| |
| Authors: | Impurity Absorption of GaAs Semiconductor WANG Yuming XUE Changjiang |
| |
| Affiliation: | Impurity Absorption of GaAs Semiconductor~1,WANG Yuming~1,XUE Changjiang~1 |
| |
| Abstract: | When GaAs photoconductive switch is biased at 10~3 V/cm and is illuminated by incidental impulse with wavelength of 1064nm, photoconductive current is observed. The phenomenon is explained by impurity absorption theory. With the theory, photoconductive carrier density depending on the time is simulated when GaAs photoconductive switch is illuminated by constant optical intensity and by Gaussianshaped optical intensity. With comparison, the theoretical result is well agreed with the experimental result. |
| |
| Keywords: | impurity absorption carriers induced by laser pulse optical excitation capture effect |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
