| GaAs压电物性的研究 |
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| 引用本文： | 黄庆安,吕世骥,童勤义.GaAs压电物性的研究[J].东南大学学报(自然科学版),1991(2). |
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| 作者姓名： | 黄庆安 吕世骥 童勤义 |
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| 作者单位： | 微电子中心，微电子中心，微电子中心 |
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| 摘 要： | 较详细地讨论了GaAs压电效应的起源。有3种不同的机制对压电效应有贡献.这些机制是离子电荷的内部位移、电子电荷的内部位移和由于应变引起的离子性的变化.推导出了任意晶体取向压电常数张量的表达式,证明了,对正应力而言,GaAs〈111〉方向有最强压电效应发生,且Ga原子呈负电性,而As原子则呈正电性.
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| 关 键 词： | 压电效应 砷化镓 传感器/集成GaAs器件 |
A Study of the Piezoelectric Properties of GaAs |
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| Huang Qingan Lu Shiji Tong Qinyi.A Study of the Piezoelectric Properties of GaAs[J].Journal of Southeast University(Natural Science Edition),1991(2). |
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| Authors: | Huang Qingan Lu Shiji Tong Qinyi |
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| Institution: | Microelectronics Center |
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| Abstract: | The origin of the piezoelectric effect of GaAs is discussed in detail. Three different mechanisms may contribute to the piezoelectric effect. These mechanisms are the internal displacement of the ionic charge, the internal displacement of the electronic charge and the charge in ionicity due to strain. The piezoelectric constant tensors for arbitrarily oriented GaAs are obtained. It is verified that for normal stresses the maxium piezoelectric effect occurs in the GaAs 111 directions. The Ga atoms arc negatively charged and the As atoms positively charged. |
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| Keywords: | piezoelectric effect Gallium Arsenide sensor / integrated GaAs device |
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