砷化铟中的剩余施主和高纯砷化铟晶体的生长Ⅰ.砷化铟的浅施主——总受主关系和剩余施主本性的推测

本文根据文献数据推导出InAs的浅施主N_D对总受主N_A的关系曲线,发现体单晶、气相和液相外延三种材料的数据能用一条曲线来表示.因此推测InAs体材料中的剩余施主应以化学杂质为主.

GROWTH OF HIGH PURITY InAs CRYSTALS AND A DISCUSSION ON THE RESIDUAL DONORS I.Relationship Between the Concentrations of Shallow Donor and Total Acceptor and a Speculation About the Nature of Residual Donor in InAs

A correlation between the calculated concentrations of shallow donor (N_D) and total acceptor (N_A) in InAs is deducod on the basis of the published data. It is shown that the data for bulk, VPE and LPE materials can be expressed by a single N_D versus N_A curve. This result leads to a reasonable inference that the total concentration of impurities Si, Cu, Na (K)， S (Se, Te) and perhaps also G, could be responsible for the residual donor concentration in InAs.