| 双岛结构多晶硅压力传感器削角补偿技术的研究 |
| |
| 引用本文： | 曲宏伟,张为,姚素英,毛赣如,张维新,喻白莹.双岛结构多晶硅压力传感器削角补偿技术的研究[J].天津大学学报(自然科学与工程技术版),2000,33(2):244-246. |
| |
| 作者姓名： | 曲宏伟 张为 姚素英 毛赣如 张维新 喻白莹 |
| |
| 作者单位： | 天津大学电子信息工程学院!天津300072 |
| |
| 基金项目： | 国家自然基金资助项目!(696760 36) |
| |
| 摘 要： | 详细讨论了双岛结构多晶硅压力传感器制作过程中的一种微机械加工技术，传感器采用的材料是双面抛学的（１００）晶面硅片，制作中还利用了半导体集成电路平面工艺。研制这种传感器遇到的主要问题是硅各向异性腐蚀的凸角削角问题，为削角补偿设计了两种特殊形状的掩膜结构，在实验中获得了满意的效果，并且制出了性能优良的双岛结构多晶硅压力传感器。
|
| 关 键 词： | 削角补偿 双岛结构 多晶硅 压力传感器 |
THE STUDY ON CORNER UNDERCUTTING COMPENSATION OF TWIN-ISLE STRUCTURE POLYSILICON PRESSURE SENSOR |
| |
| QU Hong-wei,ZHANG Wei,YAO Su-ying,MAO Gan-ru,ZHANG Wei-xin,YU Bai-ying.THE STUDY ON CORNER UNDERCUTTING COMPENSATION OF TWIN-ISLE STRUCTURE POLYSILICON PRESSURE SENSOR[J].Journal of Tianjin University(Science and Technology),2000,33(2):244-246. |
| |
| Authors: | QU Hong-wei ZHANG Wei YAO Su-ying MAO Gan-ru ZHANG Wei-xin YU Bai-ying |
| |
| Abstract: | This paper mainly discusses a micromachining technology used during the fabrication of the twin isle structure polysilicon pressure sensor.The starting material of the sensor is (100) orientated monocrystal silicon wafer with double sides polished.The semiconductor IC process is also used in the fabrication.A main problem in preparation is the convex corner undercutting during the anisotropic etching.Two special pattern mask structures are designed for compensation.The results of experiments are quite good,and the optimized twin isle structure polysilicon pressure sensors with excellent properties are fabricated. |
| |
| Keywords: | corner undercutting compensation twin isle structure polysilicon pressure sensor |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
