| MoSi2低温氧化行为的研究 |
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| 引用本文： | 张厚安,梁洁萍,李颂文,龙春光.MoSi2低温氧化行为的研究[J].湖南科技大学学报(自然科学版),1999,14(1). |
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| 作者姓名： | 张厚安 梁洁萍 李颂文 龙春光 |
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| 作者单位： | 湘潭矿业学院机械系,湖南湘潭,411201 |
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| 摘 要： | 通过热重量分析法（简称ＴＧＡ法）测定了ＭｏＳｉ２在低温下氧化不同时间后的重量变化，发现５００℃比４００℃或６００℃时的氧化速率明显加快，但未出现“ＰＥＳＴ”现象．认为“ＰＥＳＴ”与氧化层中相的组成有密切关系，氧化时表面生成的致密ＳｉＯ２保护层是阻碍氧化深入进行的重要原因．图３，参４．
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| 关 键 词： | 氧化 MoSi_2 温度 |
STUDY OF LOW-TEMPERATURE OXIDATION PROCESS OF MoSi2 |
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| Zhang Houan,Liang Jieping,Li Songwen,Long Chunguang.STUDY OF LOW-TEMPERATURE OXIDATION PROCESS OF MoSi2[J].Journal of Hunan University of Science & Technology(Natural Science Editon),1999,14(1). |
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| Authors: | Zhang Houan Liang Jieping Li Songwen Long Chunguang |
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| Abstract: | The weight change of MoSi2 oxidized different
times at low-temperature was measured by TGA. It showed that the oxidation rate at 500 was
faster than that at 400 or 600 , but the PEST didn't occur. The PEST is closely connected with the
phase in the oxidized film,the important reason is that a fine and close SiO2 film,which formed in
surface when oxidizing,provents further development of oxidiation at low-temperature.3figs.,4refs. |
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| Keywords: | oxidation MoSi2 temperature |
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