| 铝硅面垒型半导体探测器作为标定手段的论证 |
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| 引用本文： | 李俊兴.铝硅面垒型半导体探测器作为标定手段的论证[J].菏泽学院学报,1998(4). |
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| 作者姓名： | 李俊兴 |
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| 作者单位： | 中国工程物理研究院工学院 成都 |
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| 摘 要： | 对用铝硅面垒型半导体探测器作为标定手段进行了充分的论证。该探测器可以用来测试软X射线,较之于全吸收充氙电离室,它有体积小、使用方便等优点;比金硅面垒型半导体探测器的透射率又大得多,文章对各种物理机制引出的诸修正项和各种参量测量的误差,做了认真的考虑、分析和计算(含估算)。结果表明,总精度小于10％。
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| 关 键 词： | 软X射线 探测器 标定 |
A Demonstration On Al - Si Surface - Barrier Semiconductor Defector Used As a Given Somple Measure |
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| Li Junxing.A Demonstration On Al - Si Surface - Barrier Semiconductor Defector Used As a Given Somple Measure[J].Journal of Heze University,1998(4). |
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| Authors: | Li Junxing |
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| Abstract: | This article fully demonstrated the Al-Si surface - barrier semiconductor defector used as a given sample measure. The detector, can be used to measwring the soft X - rany, is smaller in volume and more convenient in use than those of the fully absorbing ionizaiion chamber filled with Xe and much beffer in fransmissivity than that of the Au- Si's. In the article, all varions revised farm and the folerances of each paramefar measure drawn from the varieties of physics mechanism have bun analyzed and counted (consisting of estimating) seriously, with the result that the total precision is within ten percent. |
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| Keywords: | soft X - ray dcfactor givan sample |
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