| 异质结构液相外延中杂质的扩散行为 |
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| 引用本文： | 张庆有,贾岸伟,张玉书,石家纬,高鼎三.异质结构液相外延中杂质的扩散行为[J].吉林大学学报(理学版),1987(4). |
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| 作者姓名： | 张庆有 贾岸伟 张玉书 石家纬 高鼎三 |
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| 作者单位： | 吉林大学电子科学系
(张庆有,贾岸伟,张玉书,石家纬),吉林大学电子科学系(高鼎三) |
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| 摘 要： | 本文导出了异质结构液相外延中杂质扩散分布函数的一般形式,指出扩散PN结位置存在“退缩”效应,讨论了外延生长参数对PN结位置的影响,并与Zn在InGaAsP/InP液相外延中扩散PN结位置的实验结果做了比较。
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| 关 键 词： | 杂质扩散 异质结构 退缩效应 PN结位置 杂质扩散分布函数 |
The Behaviours of Impurity Diffusion in LPE for Heterostructure |
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| Zhang Qingyou,Jia Anwei,Zhang Yushu,Shi Jiawei and Gao Dingsan.The Behaviours of Impurity Diffusion in LPE for Heterostructure[J].Journal of Jilin University: Sci Ed,1987(4). |
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| Authors: | Zhang Qingyou Jia Anwei Zhang Yushu Shi Jiawei and Gao Dingsan |
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| Abstract: | In this paper, based on the quasi-equilibrium assumption and with Laplace transformation of the diffusion equations, we derived the impurity diffusion distribution functions in the liquid phase epitaxial (LPE) heterostructures.From the analysis of the results, we obtained the "retreating effect" in the diffused PNjunction site. Upon this effect,we discussed that the PN-junction site is influenced by the parameters in LPE, and presented some of the related curves which were compared with the experimental results of the PN-junction site of Zn-diffusion in LPE for InGaAsP/InP heterostructures. |
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| Keywords: | impurity diffusion retreating effect PN-junction site impurity diffusion distribution function |
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