利用电镀铜填充微米盲孔与通孔之应用

电子产品之高密度内连结制程技术,从上游的半导体制程到中游的封装基板制程,一直到下游的电路板制程,似乎都需要依赖电镀铜填孔技术.近几年来,电镀铜填孔技术日趋受到重视,相关专秘的电镀配方、技术、设备以及周边配套的仪器设施等,如雨后春笋般地发展起来.以往常用但未能深入了解的电镀铜技术有了跃进式的突破,值得探讨.这些技术的发展,似乎有着轮回应用的走势,即下游电路板的电镀铜制程技术似乎渐渐朝半导体制程技术发展,因此衍生出电镀铜填充盲孔的制程技术;而上游的半导体制程工艺中以往没有所谓的镀通孔(PTH),如今却因为3D芯片整合的需要,出现了所谓的穿硅孔(TSV),而所谓的TSV,其实与镀通孔具有类似的制程步骤以及相同的功能与目的,只是介电材料、设备等不同而已.针对目前电镀铜填充微米级盲孔与通孔的相关技术作概略式的介绍与回顾.

Applications of Microvia and Through-Hole Filling by Copper Electroplating

The interconnect process technology of electronic products,from the upstream semiconductor process to the midstream packaging process and to the downstream printed circuit board(PCB) process,greatly need copper filling technology by electroplating.Therefore,copper filling by electroplating is being taken much attention.The related confidential formulas,technologies,tools and corresponding instruments are being developed as bamboo shoots after a spring rain.Hence,the copper electroplating technology,which is often used but not understood well,has been greatly improved and explored.Interestingly,the copper metallization technology has a trend that rotates between two industry fields,that is,the development of copper electroplating in downstream PCB gradually approaches to that of semiconductor.Therefore,microvia filling by copper electroplating emerges in PCB.On the other hand,the upstream semiconductor process had no plated through hole(PTH),but,right now,through silicon via(TSV) appears because of the requirement of 3D IC.The so-called TSV has similar process steps and functions to these of PTH,except for the difference in dielectric material and tools.Herein,the related technologies about microvia and through hole filling by copper electroplating are briefly introduced and reviewed.