| 电沉积和硒化制备CuInSe2薄膜 |
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| 引用本文： | 王延来,尚升,聂洪波,倪沛然,果世驹. 电沉积和硒化制备CuInSe2薄膜[J]. 北京科技大学学报, 2009, 31(3) |
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| 作者姓名： | 王延来 尚升 聂洪波 倪沛然 果世驹 |
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| 作者单位： | 1. 北京科技大学粉末冶金研究所,北京,100083
2. 无锡市爱芯科微电子有限公司,无锡,214028 |
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| 摘 要： | 以石墨为阳极、钛片为阴极,采用恒电流法制备Cu-In预制膜,然后硒化处理得到CuInSe2薄膜.分析了预制膜和CuInSe2薄膜的相组成及其影响因素.结果表明:采用不同的电沉积工艺,可以得到不同相组成的Cu-In预制膜.在保证Cu/In小于1的条件下,降低InCl3浓度和H3Cit/CuCl2浓度比,选择较高电流,可以获得具有CuIn相和Cu2In相的Cu-In预制膜.含有CuIn相和Cu2In相的Cu-In预制膜,经硒化得到的CuInSe2薄膜具有单一CuInSe2相组成,并且符合化学剂量比要求;而只含有CuIn相的预制膜硒化后除了有CuInSe2相外还出现了CuSe相.
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| 关 键 词： | CuInSe薄膜 电沉积 硒化 相结构 |
Preparation of CuInSe2 thin films by electrodeposition and selenization |
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| WANG Yan-lai,SHANG Sheng,NIE Hong-bo,NI Pei-ran,GUO Shi-ju. Preparation of CuInSe2 thin films by electrodeposition and selenization[J]. Journal of University of Science and Technology Beijing, 2009, 31(3) |
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| Authors: | WANG Yan-lai SHANG Sheng NIE Hong-bo NI Pei-ran GUO Shi-ju |
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| Abstract: | CuInSe2 thin films were prepared by selenization of electrodeposited Cu-In precursors on Ti substrate under constant current with a carbon rod worked as anode.The phase composition and its influencing factors of Cu-In precursor films and CuInSe2 thin films were studied.The results show that controlling deposition parameters can change the phase composition of Cu-In precursor films.When the atomic ratio of Cu/In is less than 1,the precursors containing the CuIn phase and the Cu2In phase are obtained at a low... |
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| Keywords: | CuInSe2 thin film electrodeposition selenization phase structure |
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