| 光控晶闸管n发射层深度的研究 |
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| 引用本文： | 余岳辉,彭昭廉,陈涛. 光控晶闸管n发射层深度的研究[J]. 华中科技大学学报(自然科学版), 1987, 0(1) |
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| 作者姓名： | 余岳辉 彭昭廉 陈涛 |
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| 作者单位： | 华中工学院固体电子学系(余岳辉，彭昭廉)，华中工学院固体电子学系(陈涛) |
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| 基金项目： | 中国科学院科学基金资助的课题 |
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| 摘 要： | 本文以挖槽型小电流光控晶闸管(LTT)为对象,计及载流子浓度对迁移率的影响,由计算分析得到了光触发灵敏度(P_(L)~(*))与n~(+)发射层深度(X_(in))的关系,从而确定了最佳n~(+)发射层深度的范围.
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| 关 键 词： | 晶闸管 发射系统 光导纤维 发光二极管 灵敏度 |
on the Depth of n-Emitter Layer in Light-Triggered Thyristor |
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| Yu Yuehui Peng Shaolian Chen Tao. on the Depth of n-Emitter Layer in Light-Triggered Thyristor[J]. JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE, 1987, 0(1) |
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| Authors: | Yu Yuehui Peng Shaolian Chen Tao |
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| Affiliation: | Yu Yuehui Peng Shaolian Chen Tao |
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| Abstract: | A low-power light-triggered thyristor(LTT) with etched trenches has been used to study the relationship between the light-sensitivity (PL*) and depth of the n-emitter layer with the influence of carrier concentration on the mobilities taken into account. By the results obtained, the range of the optimal depth of the N-emittet layec can be determined. |
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| Keywords: | Thyristots Etnission system Optical waveguide fibre Light emitting diodes Sensitivity Depth of emitter layer. |
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