| 衬底温度对磁溅射生长氮化碳薄膜的影响 |
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| 引用本文： | 郑伟涛.衬底温度对磁溅射生长氮化碳薄膜的影响[J].吉林大学学报(理学版),1997(1). |
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| 作者姓名： | 郑伟涛 |
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| 作者单位： | 吉林大学材料科学系!长春130023 |
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| 摘 要： | 通过非平衡磁溅射方法和改变衬底温度，在单晶Si（001）衬底上制备氯化碳薄膜材料．实验结果表明，氮化碳薄膜的沉积率、氮原子质量分数皆与衬底温度有关，薄膜中的氮原子与处于sp2和sp3杂化状态的碳原子相结合．随着衬底温度的改变，氮原子与处于这两种状态的碳原子结合的比例也发生改变．
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| 关 键 词： | 氮化碳 薄膜 衬底温度 X光光电子能量谱 |
Effect of Substrate Temperature on Carbon Nitride Films Grown by Reactive Magnetron Sputtering |
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| Zheng Weitao.Effect of Substrate Temperature on Carbon Nitride Films Grown by Reactive Magnetron Sputtering[J].Journal of Jilin University: Sci Ed,1997(1). |
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| Authors: | Zheng Weitao |
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| Abstract: | Carbon nitride thin films were deposited on Si(001) using unbalanced magnetron sputteringat different substrate temperatures.It has been found that the deposition rate and nitrogen content aredependent on the substrate temperature.From XPS analysis, it has also been found that the N atomsin the films are bound to both sp2- and sp3-hybridized C atoms, which is also dependent on substratetemperature. |
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| Keywords: | carbon nitride thin film substrate temperature XPS |
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