阳极溶出伏安法测定高纯金属铟中痕量铋

<正> 阳极溶出伏安法测定痕量铋,报导不多。由于铋易水解,如酸度不够时,易沾污容器或固定电极上,且干拢因素较多,难于达到重现的结果。文献中分别报导了用阳极溶出法测定海水中痕量铋,和合金中铋等多种元素,他们使用的仪器灵敏度和分辨率高,我们的

Determination of Trace Bismuth in High—Purity Indium by Anodic Stripping Voltammetry

A method based on anodic stripping voltammetry at the rotating glassy carban electrode has been developed for direct determination of bismuth in high—purity indium. Bismuth plated at-0.20 v from an acid solution containing 0.4MHCl—4.3×10~(-5)M HgCl_2 and a large amount of indium ion gives a stipping peak proportional to concentration without interference from Sb, Cu or other metals. After a deposition period of only 4 min 4ng/ml bismuth could be detected Using the differential pluse potarographic aodic stripping voltammatry is more sensitive than adove—mentioned Satisfactory result was obtained for indium sample. At bismuth average content 8.41×10% the coefficent of Aariation is less than 5%, The averge percentage recovery is 94—106%.