| 铁电薄膜及铁电存储器研究 |
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| 引用本文： | 武德起,刘保亭,闫正,闫常瑜,赵庆勋. 铁电薄膜及铁电存储器研究[J]. 河北大学学报(自然科学版), 2005, 25(2): 225-230. DOI: 10.3969/j.issn.1000-1565.2005.02.025 |
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| 作者姓名： | 武德起 刘保亭 闫正 闫常瑜 赵庆勋 |
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| 作者单位： | 河北大学,物理科学与技术学院,河北,保定,071002 |
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| 基金项目： | 河北省自然科学基金项目(E2005000130)，河北省科技攻关项目(04213579)，河北大学人才引进博士基金项目(B0406030)，国家人事部留学人员择优资助项目 |
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| 摘 要： | 综述了铁电薄膜以及铁电存储器的发展,讨论了铁电薄膜制备方法、结构和物理性能表征,并结合作者的前期工作,详细讨论了用于铁电薄膜与硅衬底集成的导电阻挡层问题,指出了铁电薄膜研究中需重点解决的一些问题.
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| 关 键 词： | 铁电薄膜 集成铁电体 铁电存储器 |
| 文章编号： | 1000-1565(2005)02-0225-06 |
| 修稿时间： | 2004-09-24 |
Ferroelectric Films and Ferroelectric Random Access Memory |
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| WU De-qi,LIU Bao-ting,YAN Zheng,YAN Chang-yu,ZHAO Qing-xun. Ferroelectric Films and Ferroelectric Random Access Memory[J]. Journal of Hebei University (Natural Science Edition), 2005, 25(2): 225-230. DOI: 10.3969/j.issn.1000-1565.2005.02.025 |
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| Authors: | WU De-qi LIU Bao-ting YAN Zheng YAN Chang-yu ZHAO Qing-xun |
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| Abstract: | Ferroelectric film and its applications,including the popular methods for ferroelectric film preparation and the techniques for characterizing the structural and physical properties of ferroelectric films and capacitors are reviewed in this paper. Moreover,the conducting barrier layer for integrating ferroelectric films with silicon wafers, coupled with our previous work, has been discussed in details. Finally,some of the challenges for ferroelectric film and its applications have been pointed out. |
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| Keywords: | ferroelectric films integrated ferroelectrics ferroelectric random access memory |
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