基于硅纳米线缺陷辅助隧穿肖特基二极管研究 |
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引用本文: | 王志亮,张健.基于硅纳米线缺陷辅助隧穿肖特基二极管研究[J].南通工学院学报(自然科学版),2012(1):1-5. |
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作者姓名: | 王志亮 张健 |
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作者单位: | 华东师范大学信息科学技术学院,上海200241 |
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基金项目: | 国家自然科学基金项目(61076070); 上海市教委创新计划项目(09ZZ46); 江苏省高校自然科学研究项目(11KJB510023); 南通大学自然科学基金项目(10Z023 10Z025) |
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摘 要: | 介绍了铂(Pt)/p型硅纳米线(p-SiNWs)肖特基二极管的制备方法,在300~370 K温度范围内,测量了Pt/p-SiNWs肖特基二极管I-V特性.根据热发射(TE)、产生-复合(GR),隧穿(TU)和漏电流(RL)理论模型,拟合了肖特基二极管电流传输机制,拟合结果说明Pt/p-SiNWs肖特基二极管中电流传输机制为缺陷辅助隧穿机制.此外,根据实验数据计算了肖特基二极管主要特征参数,二极管理想因子n随温度升高而减小,势垒高度Φb0随温度升高而增加,并且隧穿参数E0不随温度而变化.
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关 键 词: | 硅纳米线 缺陷辅助隧穿 肖特基二极管 电流传输 |
Study on Trap-Assisted Tunneling Schottky Diode Based on Silicon Nanowires |
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Authors: | WANG Zhi-liang ZHANG Jian |
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Institution: | (School of Information Science and Technology,East China Normal University,Shanghai 200241,China) |
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Abstract: | The Schottky diodes of Platinum(Pt) thin film on p-silicon nanowires(p-SiNWs) tips are fabricated.The current-transport mechanism of Pt/p-SiNWs is defect-assisted tunneling(TU).The experimental I-V data is measured and fitted to the analytical expressions of the thermionic emission(TE),generation-recombination(GR),TU,and leakage(RL) current-transport mechanisms in the temperature range of 300~370 K and voltage range of-1~1 V.The TU fitting data is in an excellent agreement with the experimental data.Meanwhile,the main characteristic parameters of Schottky are calculated based on the experimental data.Ideality factor n decreases with increasing temperature.The zero-barrier height Φb0increases with increasing temperature and the tunneling parameter E0 is independent of the temperature,which all are closely followed the TU current-transport mechanism.Hence,those results indicate that defect-assisted tunneling is dominant current-transport mechanism in Pt/p-SiNWs Schottky diodes. |
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Keywords: | silicon nanowires defect-assisted tunneling Schottky diodes current-transport |
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