| 硅晶闸管瞬态导通扩展红外观测仪的研制及应用 |
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| 引用本文： | 王益成.硅晶闸管瞬态导通扩展红外观测仪的研制及应用[J].西安理工大学学报,1987(3). |
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| 作者姓名： | 王益成 |
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| 作者单位： | 陕西机械学院自动控制系 |
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| 摘 要： | 观察硅晶闸管瞬态导通过程的红外图象,是检测电力半导体特性的极为有用的方法。红外观测仪用于研究硅晶闸管的瞬态导通的初始过程及其等离子区扩展。本文讨论该仪器的设计思想和工作原理,并对观测结果进行简要分析。
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| 关 键 词： | 红外技术 初始导通 等离子区扩展 辐射 |
The Development and Applications of An Infrared Instrument for Observing Transient Current Spreading in Turn-on Process of Thyristors |
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| Wang Yicheng.The Development and Applications of An Infrared Instrument for Observing Transient Current Spreading in Turn-on Process of Thyristors[J].Journal of Xi'an University of Technology,1987(3). |
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| Authors: | Wang Yicheng |
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| Institution: | Wang Yicheng |
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| Abstract: | observing the infrared image of transient current spreading in turn-on process is a useful method to characterize power semi-conductor devices. we present here an infrared observing instrument which can be employed in study of transient features of the initial turn-on process and the plasma spreading in silicon thyristors. operation principles, design and specification of the instrument are discussed in detail. The observing results are briefly analysed. |
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| Keywords: | infrared techniue initial turn-on plasma spreading radiation |
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