| 深度紫外光刻图形精度模拟研究 |
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| 引用本文： | 田扬超.深度紫外光刻图形精度模拟研究[J].安徽师范大学学报(自然科学版),2005,28(3):253-257. |
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| 作者姓名： | 田扬超 |
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| 作者单位： | 中国科学技术大学,国家同步辐射实验室,安徽,合肥,230029 |
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| 摘 要： | UV-LIGA技术是制作大高宽比微电子机械(MEMS)的方法之一,而UV-LIGA技术的关键工艺之一为深度紫外光刻.由于紫外光衍射效应影响紫外光刻的微结构图形精度.本文主要研究了衍射效应对深紫外光刻精度的影响,并与实验结果进行了比较,理论模拟结果和实验比较吻合.因此,可以通过模拟结果得到不同厚度光刻胶的最佳曝光剂量,以便得到高质量的微结构图形.
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| 关 键 词： | SU-8 菲涅耳衍射 紫外光刻 MEMS |
| 文章编号： | 1001-2443（2005）03-0253-05 |
| 收稿时间： | 2005-06-30 |
| 修稿时间： | 2005年6月30日 |
SIMULATION OF PATTERN TRANSFER ACCURACY OF THE DEEP UV-LITHOGRAPHY |
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| TIAN Yang-chao.SIMULATION OF PATTERN TRANSFER ACCURACY OF THE DEEP UV-LITHOGRAPHY[J].Journal of Anhui Normal University(Natural Science Edition),2005,28(3):253-257. |
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| Authors: | TIAN Yang-chao |
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| Institution: | National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China |
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| Abstract: | Microstructure with high aspect ratio is widely used in MEMS. The deep UV-lithography is one of the main processing technique of high aspect ratio microstructure fabrication. But it is hard to fabricate high aspect ratio microstructures with high precision due to Fresnd diffraction in the UV-lithography process. The pattern transfer accuracy of deep UV-lithography is investigated in this paper. The width of the resist structure in different depths was measured. The good agreement between the experimental and theoretical results allows to get the high pattern transfer accuracy microstmcture through optimizing exposure close for different resist thicknesses. |
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| Keywords: | SU-8 fresnel-diffraction W-lithography MEMS |
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