| 电场和注量对硅辐照缺陷形成的影响 |
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| 引用本文： | 吴凤美,赖启其.电场和注量对硅辐照缺陷形成的影响[J].南京大学学报(自然科学版),1992,28(1):45-50. |
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| 作者姓名： | 吴凤美 赖启其 |
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| 作者单位： | 南京大学物理系，南京大学物理系，南京大学物理系，南京大学物理系 |
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| 摘 要： |
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| 关 键 词： | 电场 注量 硅 辐照缺陷 形成系数 |
THE INFLUENCE OF ELECTRIC FIELD AND FLUX ON THE FORMATION RADIATION DEFECTS IN SILICON |
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| Wu Fengmei Lai Qiqi Shi Yi Wang Zhenzhou.THE INFLUENCE OF ELECTRIC FIELD AND FLUX ON THE FORMATION RADIATION DEFECTS IN SILICON[J].Journal of Nanjing University: Nat Sci Ed,1992,28(1):45-50. |
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| Authors: | Wu Fengmei Lai Qiqi Shi Yi Wang Zhenzhou |
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| Institution: | Department of Physics |
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| Abstract: | In this paper,the influence of electric field,flux and flux rate on the forma- tion of electron radiation defects in silicon have been investigated.Experiment results show that the application of an electric field causes nonuniform distribution of the density of the defects in the space charge region.Under high fiux or flux rate radiation,the efficiency of formation of some radiation defects reduce obviously.The theory relevaut to these results is also analysed. |
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| Keywords: | Radiation defect Electric field Flux The space charge region The efficiency of formation |
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