| ZnO荧光薄膜的制备及特性研究 |
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| 引用本文： | 边超,张兰,姚宁,张兵临. ZnO荧光薄膜的制备及特性研究[J]. 郑州大学学报(理学版), 2003, 35(3): 35-37 |
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| 作者姓名： | 边超 张兰 姚宁 张兵临 |
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| 作者单位： | 1. 郑州大学物理工程学院,郑州,450052
2. 郑州大学工程力学系,郑州,450052 |
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| 摘 要： | 采用直流反应磁控溅射方法在镀有ITO的玻璃衬底上制备了ZnO荧光薄膜。通过X射线衍射(XRD)、能谱分析仪对退火前后薄膜的结晶状况和成分进行了分析，利用荧光探测单色仪对薄膜的光致发光(PL)特性进行了研究。退火前后的发光峰分别位于光谱绿区499．2nm和517．8nm处。退火处理明显提高了绿光强度，并且使发光峰产生了红移。
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| 关 键 词： | ZnO荧光薄膜 制备笔法 荧光材料 光致发光特性 直流反应磁控溅射方法 绿光强度 红移 |
| 文章编号： | 1671-6841(2003)03-0035-03 |
| 修稿时间： | 2003-01-02 |
Preparation and Characteristics of ZnO Fluorescent Films |
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| Bian Chao ,Zhang Lan ,Yao Ning ,Zhang Binglin. Preparation and Characteristics of ZnO Fluorescent Films[J]. Journal of Zhengzhou University(Natrual Science Edition), 2003, 35(3): 35-37 |
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| Authors: | Bian Chao Zhang Lan Yao Ning Zhang Binglin |
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| Affiliation: | Bian Chao 1,Zhang Lan 2,Yao Ning 1,Zhang Binglin 1 |
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| Abstract: | ZnO fluorescent films are deposited by reactive DC magnetron sputtering on glass substrate covered with ITO thin film.The unannealed and annealed ZnO thin films are detected by XRD and energy spectrometer,respectively,to analyze the crystallinity and components.Photoluminescent characteristics of these films are studied by fluorescent monochromater.The peak wavelength unnealed and annealed were both in green band about 499.2 nm and 517.8 nm respectively.After annealing the intensity of green luminescence is increased and the PL peak position moved to long wavelengths. |
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| Keywords: | ZnO thin films XRD PL |
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