| Colossal magnetoresistive p-n junctions of perovskite oxide La0.9Sr0.1MnO3／SrNb0.01Ti0.99O3 |
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| 引用本文： | Lü Huibin.Colossal magnetoresistive p-n junctions of perovskite oxide La0.9Sr0.1MnO3／SrNb0.01Ti0.99O3[J].中国科学通报(英文版),2003,48(13):1328-1330. |
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| 作者姓名： | Lü Huibin |
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| 作者单位： | L Huibin，DAI Souyu，CHEN Zhenghao，YAN Lei，ZHOU Yueliang & YANG Guozhen Laboratory of Optical Physics，Institute of Physics & Center for Condensed Matter Physics，Chinese Academy of Sciences，100080 Beijing，China |
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| 摘 要： | We have successfully fabricated the colossal magnetoresistive (CMR) p-n junctions of perovskite oxide La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 (LSMO/SNTO) with laser molecular beam epitaxy. The I-V characteristics of the LSMO/SNTO p-n junctions as a function of applied magnetic field (0—5 T) were studied between 100 and 300 K. We found that the p-n junction exhibited the CMR behavior. The CMR ratio △R/R0 (△R = RH - R0) is positive in magnetic fields below 0.13 T and at high temperature, while it displays a negative CMR near 100 K and in magnetic fields over 0.13 T. The CMR ratio values are 8% at 0.1 T and 13% at 5 T and 300 K, 40% at 0.1 T and 150 K, 10% at 0.13 T and -60% at 5 T and 100 K. The CMR behavior of the p-n junction is different from those of the LaMnO3 compound family.
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| 关 键 词： | 巨磁电阻 钙钛矿氧化物 LSMO／SNTO CMR 激光分子束外延 超导体 |
| 收稿时间： | 2003-04-09 |
Colossal magnetoresistive p-n junctions of perovskite oxide La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3O3 |
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| Huibin Lü,Souyu Dai,Zhenghao Chen,Lei Yan,Yueliang Zhou,Guozhen Yang.Colossal magnetoresistive p-n junctions of perovskite oxide La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3O3[J].Chinese Science Bulletin,2003,48(13):1328-1330. |
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| Authors: | Huibin Lü Souyu Dai Zhenghao Chen Lei Yan Yueliang Zhou Guozhen Yang |
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| Institution: | L Huibin, DAI Souyu, CHEN Zhenghao, YAN Lei, ZHOU Yueliang & YANG Guozhen Laboratory of Optical Physics, Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, 100080 Beijing, China |
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| Abstract: | We have successfully fabricated the colossal magnetoresistive (CMR) p-n junctions of perovskite oxide La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 (LSMO/SNTO) with laser molecular beam epitaxy. The I-V characteristics of the LSMO/SNTO p-n junctions as a function of applied magnetic field (05 T) were studied between 100 and 300 K. We found that the p-n junction exhibited the CMR behavior. The CMR ratio rR/R0 (rR = RH - R0) is positive in magnetic fields below 0.13 T and at high temperature, while it displays a negative CMR near 100 K and in magnetic fields over 0.13 T. The CMR ratio values are 8% at 0.1 T and 13% at 5 T and 300 K, 40% at 0.1 T and 150 K, 10% at 0.13 T and 60% at 5 T and 100 K. The CMR behavior of the p-n junction is different from those of the LaMnO3 compound family. |
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| Keywords: | perovskite oxide p-n junction CMR |
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