| InP单晶表面势垒高度与表面态密度的光伏测算 |
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| 引用本文： | 谢廷贵.InP单晶表面势垒高度与表面态密度的光伏测算[J].厦门大学学报(自然科学版),1995(6). |
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| 作者姓名： | 谢廷贵 |
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| 摘 要： | 应用变温光伏方法测定了Ｎ型低阻ＩｎＰ单晶的表面势垒高度，进而分析、计算了简并化的ＩｎＰ单晶表面态密度。
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| 关 键 词： | InP单晶，光伏法，表面势垒，表面态密度 |
Measurement of Surface Barrier Height and Surface StatesDensity of InP Single Crystal with the Photovoltaic Method |
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| Xie Tingui.Measurement of Surface Barrier Height and Surface StatesDensity of InP Single Crystal with the Photovoltaic Method[J].Journal of Xiamen University(Natural Science),1995(6). |
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| Authors: | Xie Tingui |
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| Institution: | Dept.of Elect.Eng. |
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| Abstract: | Surface barrier height of N-type InP low resistivity single crystal is measuredwith the photovoltaic method at changeable temperatures,and then surface state density of thisdegenerated sample is analyzed and calculated. |
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| Keywords: | InP single crystal The photovoltaic method Surface barrier height Surface state density |
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