BaAl2S4:Eu溅射靶材合成方法研究

采用放电等离子烧结(SPS)方法和粉末烧结法制备BaAl2S4:Eu溅射靶材,分析了靶材成分和结构特性以及利用靶材制备薄膜的发光特性.实验结果表明,SPS烧结的BaAl2S4:Eu溅射靶材的纯度高,无其它硫化物形成,被氧化的可能性小,靶材致密,气孔少;形成薄膜的PL谱主要是470nm处的蓝光发射.粉末烧结法制备的Ba-Al2S4:Eu溅射靶材的纯度低,靶材被氧化的几率大,气孔多,不致密,呈三维网状结构;在470nm处的蓝光发射峰值相对较弱.放电等离子烧结方法更适合制备BaAl2S4:Eu溅射靶材.

Synthetic Process of BaAl2S4:Eu Sputtering Target

Europium-doped barium thioaluminate (BaAl₂S₄:Eu) sputtering targets were synthesized by the process of spark plasma sintering (SPS) and powder sintering, respectively. The components and structures of the targets were analyzed. The luminescence properties of the films deposited by the targets were also observed. It is found that the component parts contained in BaAl₂S₄:Eu target synthesized by SPS have high purity and density with less hole, and no oxides or other sulfides are observed. Photoluminescence (PL) spectrum of the film shows there is a blue emission main peak at 470nm. While the compounds contained in BaAl₂S₄:Eu target synthesized by powder sintering have low purity and density with more holes like three-dimensional network structure, and the target is easy to be oxidized. PL spectrum of the deposited film shows the blue emission peak at 470nm is relatively weak. In contrast, the spark plasma sintering method is more suitable for preparing BaAl2S4:Eu sputtering target.