| MISiC肖特基二极管式气体传感器响应特性分析 |
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| 引用本文： | 钟德刚,徐静平,黎沛涛,于军. MISiC肖特基二极管式气体传感器响应特性分析[J]. 华中科技大学学报(自然科学版), 2002, 30(3): 89-91 |
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| 作者姓名： | 钟德刚 徐静平 黎沛涛 于军 |
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| 作者单位： | 1. 华中科技大学电子科学与技术系,430074
2. 香港大学电机电子工程系 |
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| 基金项目： | 湖北省自然科学基金资助项目 (2 0 0 0J15 8)，香港大学“TheinternalawardforCASmembership”资助项目 |
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| 摘 要： | 分析了金属－绝缘体－SiC(MISiC)结构肖特基二极管（SBD）气体传感器敏感机理，通过将热电子发射理论与隧道理论结构，建立了器件物理模型。模拟结果表明，响应特性与金属电极类型，绝缘层厚度，气体吸收效率和温度有关。模型结果与实验符合较好。通过模拟，得到MISiC结构最佳绝缘层（SiO2)厚度应为１nm左右。
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| 关 键 词： | MISiC 肖特基二极管式气体传感器 响应特性 敏感机理 金属－绝缘体－碳化硅结构 I－V特性 |
| 文章编号： | 1671-4512(2002)03-0089-03 |
| 修稿时间： | 2001-10-15 |
Analysis on response properties of MISiC schottky diode gas sensors |
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| Zhong Degang Xu Jingping P. T. Lai Yu Jun Postgraduate, Dept. of Electronic Sci. , Tech.,Huazhong Univ. of Sci. , Tech.,Wuhan ,China.. Analysis on response properties of MISiC schottky diode gas sensors[J]. JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE, 2002, 30(3): 89-91 |
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| Authors: | Zhong Degang Xu Jingping P. T. Lai Yu Jun Postgraduate Dept. of Electronic Sci. & Tech. Huazhong Univ. of Sci. & Tech. Wuhan China. |
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| Affiliation: | Zhong Degang Xu Jingping P. T. Lai Yu Jun Postgraduate, Dept. of Electronic Sci. & Tech.,Huazhong Univ. of Sci. & Tech.,Wuhan 430074,China. |
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| Abstract: | The sensitive mechanisms of gas sensors with a structure of metal insulator silicon carbide (MISiC) Schottky diode are analyzed. A physical model for the device is developed by combining thermal electron emission theory with tunnel theory. The simulated results indicate that the response characteristic is related to metal electrodes, insulator thickness, gas absorbed efficiency and temperature. These results exactly agree with the experiment results. It is found that the optimum thickness of insulator (SiO 2) is around 1?nm |
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| Keywords: | MISiC gas sensors Schottky diodes simulation |
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