| 直流磁控溅射制备透明导电ZAO薄膜退火处理时间的研究 |
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| 引用本文： | 史君黛,杨恢东,黄波,许宝玉,余松.直流磁控溅射制备透明导电ZAO薄膜退火处理时间的研究[J].科学技术与工程,2011,11(6):1192-1196. |
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| 作者姓名： | 史君黛 杨恢东 黄波 许宝玉 余松 |
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| 作者单位： | 暨南大学信息与科学技术学院,广州,510632 |
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| 基金项目： | 广东省省部产学研项目；广东省粤港关键领域招标项目；广东省自然科学基金项目；浙江大学硅材料国家重点实验室访问学者基金项目 |
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| 摘 要： | 为改进太阳能薄膜材料制备工艺,利用直流磁控溅射方法,在较高氩气压强——12.7 Pa下制备出透明导电掺铝ZnO(ZAO)薄膜,并对其进行退火处理时间的研究。与其他研究者不同,利用较高压强也制备出高性能ZAO薄膜,并且可以利用退火处理改善薄膜的晶体结构、内应力、表面形貌以及光电性能。薄膜的电阻率随着退火时间的增加而降低,从原位沉积时的3.5×10-3Ω.cm,下降到1.9×10-3Ω.cm;薄膜的平均透光率增加到80%以上,光谱吸收边发生蓝移。结果表明,退火2 h,ZAO性能改善最优。
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| 关 键 词： | ZAO 直流磁控溅射 退火时间 |
| 收稿时间： | 12/7/2010 2:48:45 PM |
| 修稿时间： | 2010/12/17 0:00:00 |
Influence of Annealing Time on Transparent Conductive Al-doped ZnO(ZAO) Thin Films Fabricated by Direct Current (DC) Sputtering |
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| shijundai,yanghuidong,huangbo,xubaoyu and yusong.Influence of Annealing Time on Transparent Conductive Al-doped ZnO(ZAO) Thin Films Fabricated by Direct Current (DC) Sputtering[J].Science Technology and Engineering,2011,11(6):1192-1196. |
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| Authors: | shijundai yanghuidong huangbo xubaoyu and yusong |
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| Institution: | SHI Jun-dai,YANG Hui-dong,HUANG Bo,XU Bao-yu,YU Song(School of Information and Science Technology,Jinan University,Guangzhou 510632,P.R.China) |
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| Abstract: | In order to improve the quality of thin films for solar cells,transparent conductive Al-doped ZnO(ZAO) thin films were fabricated by direct current(DC) sputtering with a high work pressrue of 12.7 Pa and annealed for different time.Different from the other scientific achievements,high quality ZAO thin films could be prepared for high work pressure,and the influence of annealing time on properties of ZAO thin films were studied.It shows that the crystal structures of films are improved and the surface morpho... |
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| Keywords: | ZAO |
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