| 激光在半导体技术中的主要应用及进展 |
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| 引用本文： | 王光伟.激光在半导体技术中的主要应用及进展[J].科技导报(北京),2008,26(6):78-83. |
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| 作者姓名： | 王光伟 |
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| 作者单位： | 天津工程师范大学电子工程系 天津300222 |
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| 基金项目： | 天津市高校科技发展项目 |
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| 摘 要： | 简要概述了激光在半导体技术中的主要应用。这些应用大致涵盖激光掺杂、激光退火、激光沉积薄膜、激光引发固相反应和激光光刻等几方面。激光光刻中,选取248nmKrF,193nmArF和157nmF2准分子激光光刻着重进行了探讨。分析了这些激光工艺的现状、特点和最新进展,并对存在的问题和发展趋势作了研究。
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| 关 键 词： | 激光掺杂 激光退火 激光沉积薄膜 激光固相反应 激光光刻 |
| 文章编号： | 1000-7857(2008)06-0078-06 |
| 修稿时间： | 2007年11月9日 |
Applications of Laser in Semiconductor Technology |
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| WANG Guangwei.Applications of Laser in Semiconductor Technology[J].Science & Technology Review,2008,26(6):78-83. |
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| Authors: | WANG Guangwei |
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| Abstract: | The applications of laser in semiconductor technology are reviewed in this paper. They include laser doping, laser annealing, laser depositing film, solid-phase reaction induced by laser and laser photolithograph. In laser photolithograph, 248 nm KrF, 193 nm ArF and 157 nm F2 excimer laser photolithograph techniques are chosen as examples. The current status, technological characteristics and latest progresses of these laser techniques are analyzed. And some related problems and development trend of laser techniques are discussed. |
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| Keywords: | laser doping laser annealing laser depositing film solid phase reaction induced by laser laser photolithography |
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