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| 溅射气压对ZnO薄膜的影响 | |
| 引用本文： | 孙海燕,耿广州,黄家寅,单福凯,LEE Won-jae. 溅射气压对ZnO薄膜的影响[J]. 青岛大学学报(自然科学版), 2011, 24(1): 38-41. DOI: 10.3969/j.issn.1006-1037.2011.01.010 |
| 作者姓名： | 孙海燕 耿广州 黄家寅 单福凯 LEE Won-jae |
| 作者单位： | 1. 青岛大学物理科学学院,山东,青岛,266071 2. 青岛大学物理科学学院,山东,青岛,26607;青岛大学青岛大学纤维新材料与现代纺织国家重点实验室培育基地,山东,青岛,266071 3. Electronic Ceramics Center,Dongeui University,Busan 614714,Korea |
| 摘 要： | 采用射频磁控溅射的方法，通过改变溅射气压，在玻璃衬底上沉积出具有C轴择优取向的ZnO薄膜。用X射线衍射仪（xRD）、扫描电子显微镜（SEM）和原子力显微镜（AFM）对不同溅射气压下ZnO薄膜的结构、断面和表面形貌进行研究分析。结果表明，随着溅射气压的降低，ZnO薄膜的（002）取向增强，薄膜的厚度增加，沉积速率加快，氧化锌薄膜的沉积速率从4nm／min升高到21nm／min。在溅射压强为2．5Pa时制备的ZnO薄膜粗糙度最小，大小为5．45nm。 |
| 关 键 词： | 氧化锌 磁控溅射 气压 X-射线衍射仪 |
Effects of Sputtering Pressure on Structure of ZnO Films Prepared by RF Magnetron Sputtering |
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| SUN Hai-yan,GENG Guang-zhou,HUNAG Jia-yin,SHAN Fu-kai,LEE Won-jae. Effects of Sputtering Pressure on Structure of ZnO Films Prepared by RF Magnetron Sputtering[J]. Journal of Qingdao University(Natural Science Edition), 2011, 24(1): 38-41. DOI: 10.3969/j.issn.1006-1037.2011.01.010 | |
| Authors: | SUN Hai-yan GENG Guang-zhou HUNAG Jia-yin SHAN Fu-kai LEE Won-jae |
| Affiliation: | SUN Hai-yan1a,GENG Guang-zhou1a,HUNAG Jia-yin1a,SHAN Fu-kai1a,1b,LEE Won-jae2(1a.College of Physics Science,1b.Laboratory of New Fiber Materials and Modern Textile,Growing Base for State Key Laboratory,Qingdao University,Qingdao 266071,China,2.Electronic Ceramics Center,Dongeui University,Busan 614714,Korea) |
| Abstract: | ZnO films with preferred(002) orientation were prepared on glass substrates by radio frequency(RF) magnetron sputtering at different pressures.XRD,SEM,AFM were employed to analyze the influence of the pressure on the structures,thicknesses and morphologies of ZnO thin films.Results show that the films present higher c-axis orientation and the sputtering rate changes from 4.2 nm/min to 21 nm/min with the decrease of the sputtering pressure.The surface roughness showed as small as 5.45 nm at 2.5 Pa. |
| Keywords: | ZnO RF sputtering pressure X-ray diffraction |
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