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| 相变存储器多态存储方法 | |
| 引用本文： | 刘欣,周鹏,林殷茵,汤庭鳌,赖云峰,乔保卫,冯洁,蔡炳初,Bomy Chen.相变存储器多态存储方法[J].复旦学报(自然科学版),2008,47(1):95-100. |
| 作者姓名： | 刘欣 周鹏 林殷茵 汤庭鳌 赖云峰 乔保卫 冯洁 蔡炳初 Bomy Chen |
| 作者单位： | 1. 复旦大学,专用集成电路与系统国家重点实验室,上海,200433 2. 上海交通大学,微纳科学技术研究院,上海,200030 3. Silicon Storage Technology Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA |
| 基金项目： | 国家自然科学基金资助项目(60206005,60373017,60676007) |
| 摘 要： | 提出两种实现相变存储器多值存储的方法.这两种方法基于新的机理,即通过存储单元结构或相变材料的改进来得到在传统"高阻态"和"低阻态"两态之间稳定的中间电阻状态.与传统实现相变多态存储的方法相比,利用这两种方法实现的多值相变存储,可以有效地提高多态存储的可靠性和抗噪声性能,有利于在提高存储密度的同时简化外围电路的设计,在实际应用中有良好的前景. |
| 关 键 词： | 微电子技术 相变存储器 多值存储 多值存储单元 |
| 文章编号： | 0427-7104（2008）01-0095-06 |
| 收稿时间： | 2007-03-28 |
| 修稿时间： | 2007年3月28日 |
Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application |
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| LIU Xin,ZHOU Peng,LIN Yin-yin,TANG Ting-ao,LAI Yun-feng,QIAO Bao-wei,FENG Jie,CAI Bing-cu,Bomy Chen.Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application[J].Journal of Fudan University(Natural Science),2008,47(1):95-100. | |
| Authors: | LIU Xin ZHOU Peng LIN Yin-yin TANG Ting-ao LAI Yun-feng QIAO Bao-wei FENG Jie CAI Bing-cu Bomy Chen |
| Abstract: | Two approaches are proposed for multilevel storage based on phase change technology.The steady intermediate levels between the conventional amorphous state and crystalline state of Chalcogeinide are realized by changing the structure or material of the cell based on.In comparison with the conventional implementation of multi-level storage,the approaches proposed increase the reliability,signal-to-noise,storage density,and significantly simplify peripheral circuits.They will be promising for potential application. |
| Keywords: | microelectronic technology phase change memory multilevel storage multilevel memory cell |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |