| PECVD法制备氢化非晶硅薄膜材料 |
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| 引用本文： | 黄仕华,董晶,沈佳露,刘剑. PECVD法制备氢化非晶硅薄膜材料[J]. 浙江师范大学学报(自然科学版), 2014, 0(2): 121-125 |
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| 作者姓名： | 黄仕华 董晶 沈佳露 刘剑 |
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| 作者单位： | 浙江师范大学数理与信息工程学院,浙江金华321004 |
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| 基金项目： | 国家自然科学基金资助项目（61076055）;复旦大学应用表面物理国家重点实验室开放课题（KL2011_04） |
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| 摘 要： | 采用等离子增强化学气象沉积(plasma enhanced chemical vapor deposition,PECVD)法在普通玻璃上沉积非晶硅薄膜材料.通过控制变量分别研究了p,n层的掺杂浓度、氢稀释度及i层的反应气压对薄膜材料性能的影响.结果表明:p层材料在掺杂浓度为6.67%、氢稀释度为10.6时有较高的暗电导率和较低的沉积速率;n层材料在掺杂浓度为3.33%、氢稀释度为8.3时有较高的暗电导率和较低的沉积速率;i层材料在反应气压为95 Pa、氢稀释度为15时有较高的光暗电导率之比.
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| 关 键 词： | PECVD 非晶硅薄膜 掺杂 氢稀释度 电导率 |
Hydrogenated amorphous silicon p-i-n multilayer thin film deposited by PECVD |
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| HUANG Shihua,DONG Jing,SHEN Jialu,LIU Jian. Hydrogenated amorphous silicon p-i-n multilayer thin film deposited by PECVD[J]. Journal of Zhejiang Normal University Natural Sciences, 2014, 0(2): 121-125 |
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| Authors: | HUANG Shihua DONG Jing SHEN Jialu LIU Jian |
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| Affiliation: | ( College of Mathematics, Physics and Information Engineering, Zhejiang Normal University, Jinhua Zhejiang 321004, China ) |
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| Abstract: | The amorphous silicon thin film was deposited on glass by using plasma enhanced chemical vapor deposition（PECVD）method. The influence of doping concentration and hydrogen dilution on thin film property,and the influence of reaction pressure on the i-layer property were investigated. The results indicated that the p-layer had a higher dark-conductivity and a lower deposition rate when the doping concentration and the hydrogen dilution were about 6. 67% and 10. 6,respectively. The n-layer had a higher dark-conductivity and a lower deposition rate when the doping concentration and the hydrogen dilution were about 3. 33% and 8. 3, respectively. Also the i-layer thin film had a higher photoconductivity and a dark-conductivity ratio when the reaction pressure and the hydrogen dilution were about 95 Pa and 15,respectively. |
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| Keywords: | PECVD amorphous silicon thin film doping concentration hydrogen dilution conductivity |
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