| 不同能量密度对脉冲激光沉积纳米硅晶粒尺寸的影响 |
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| 引用本文： | 邓泽超,罗青山,丁学成,褚立志,王英龙. 不同能量密度对脉冲激光沉积纳米硅晶粒尺寸的影响[J]. 河北大学学报(自然科学版), 2012, 0(1): 24-27 |
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| 作者姓名： | 邓泽超 罗青山 丁学成 褚立志 王英龙 |
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| 作者单位： | 河北大学物理科学与技术学院河北省光电信息材料重点实验室 |
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| 基金项目： | 河北省自然科学基金资助项目(E2011201134);河北省教育厅基金资助项目(2009308) |
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| 摘 要： | 在室温条件下保持Ar环境气体压强不变,采用脉冲激光沉积(PLD)技术,通过改变激光能量密度,在与烧蚀羽辉轴线垂直放置的衬底上沉积了一系列纳米硅晶薄膜,利用扫描电子显微镜(SEM)和拉曼(Raman)散射光谱对样品进行特性分析.结果表明,在能量密度为2～4J/cm2时,衬底上沉积的纳米硅晶粒尺寸和面密度基本不变.结合纳米晶粒成核生长动力学,对结果进行了定性解释.
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| 关 键 词： | 脉冲激光沉积 能量密度 纳米硅晶粒 晶粒尺寸 |
Influence of different energy densities on size of Si nanocrystal grains prepared by pulsed laser deposition |
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| DENG Ze-chao,LUO Qing-shan,DING Xue-cheng,CHU Li-zhi,WANG Ying-long. Influence of different energy densities on size of Si nanocrystal grains prepared by pulsed laser deposition[J]. Journal of Hebei University (Natural Science Edition), 2012, 0(1): 24-27 |
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| Authors: | DENG Ze-chao LUO Qing-shan DING Xue-cheng CHU Li-zhi WANG Ying-long |
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| Affiliation: | (Key Laboratory of Photo-Electricity Information Materials of Hebei Province,College of Physics Science and Technology,Hebei University,Baoding 071002,China) |
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| Abstract: | Si nanocrystal thin films were prepared by pulsed laser deposition under different energy densities in fixed pressure of Ar gas at room temperature during the process of deposition,substrates were placed vertical to plume axis.The samples were analyzed by scaning electron microscope(SEM) and Raman(Raman) scattering spectrums respectively.It was indicated that the size and areal density of grains on substrates were invariability basically in the range of 2-4 J/cm2,the results were qualitatively explained based on dynamics of nucleation and growth of grains. |
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| Keywords: | pulsed laser deposition energy density Si nanocrystal grain grain size |
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