| 双汞探针C—V法测试硅材料杂质浓度分布 |
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| 引用本文： | 丛众 石广元. 双汞探针C—V法测试硅材料杂质浓度分布[J]. 辽宁大学学报(自然科学版), 1992, 19(1): 43-48 |
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| 作者姓名： | 丛众 石广元 |
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| 作者单位： | 辽宁大学物理系，辽宁大学物理系，辽宁大学物理系 |
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| 摘 要： | 鉴于单汞探针C-V法测试半导体材料杂质浓度分布还有不方便之处及不能准确测试n/p;p/n等异型多层结构外延片电阻率分布的弊病,本文提出了双汞探针C-V法。文章中阐述了这种方法的测试原理和测试可行性分析。对各种硅材料样片大量测试结果表明:这种方法即方便又准确,测试结果的重复性相当好。
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| 关 键 词： | 半导体 硅 杂质浓度 C－V法 |
Using a Pair of Mecury Probes C-V Method to Test for Impurity Concentration Distribution |
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| Cong Zhong Shi Guangyuan Wang Rong. Using a Pair of Mecury Probes C-V Method to Test for Impurity Concentration Distribution[J]. Journal of Liaoning University(Natural Sciences Edition), 1992, 19(1): 43-48 |
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| Authors: | Cong Zhong Shi Guangyuan Wang Rong |
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| Affiliation: | Cong Zhong Shi Guangyuan Wang Rong Department of Physics,Liaoning University |
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| Abstract: | In view of the inconvenience in using single mercury probe, C-V method for measuring impurity concentration distribution in semiconductors, and its inaccuvacy for measuring resistivity distribution in epitaxial wafer a C-V method in using a pair of mercury probe is proposed in this paper. We expound the measuring principle and analyzed the feasibility of the metnod. A large number of the results were obtained from measurements of various silicon samples. This method showed its excellent accuracy, convenience and good reproducibility. |
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| Keywords: | A pair of mercury probes C-V metnod Semiconductor Impurity density distribution. |
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