| 硅基高频器件与SiGe外延技术 |
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| 引用本文： | 崔继锋,叶志镇. 硅基高频器件与SiGe外延技术[J]. 世界科技研究与发展, 2004, 26(3): 32-38 |
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| 作者姓名： | 崔继锋 叶志镇 |
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| 作者单位： | 浙江大学硅材料国家重点实验室、纳米科技中心,杭州,310027 |
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| 摘 要： | 本文描述了应用于SiGe外延的分子束外延(MBE)、超高真空化学气相沉积(UHV／CVD)、常压化学气相沉积(APCVD)、快速热化学气相沉积(RTCVD)等几种工艺及这几种工艺中的常见问题，并介绍了近来这些SiGe外延技术的改进，最后从器件角度对以上几种工艺特性进行了比较。
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| 关 键 词： | 硅基高频器件 SiGe 外延技术 常压化学气相沉积 分子束外延 锗硅材料 |
Silicon Based High Frequency Devices and SiGe Epitaxy Technique |
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| CUI Jifeng YE Zhizhen. Silicon Based High Frequency Devices and SiGe Epitaxy Technique[J]. World Sci-tech R & D, 2004, 26(3): 32-38 |
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| Authors: | CUI Jifeng YE Zhizhen |
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| Abstract: | This article focuses on the actual growth processes of SiGe strained layers. Molecular beam epitaxy (MBE) is described along with three types of chemical vapor deposition: ultrahigh vacuum (UHV/CVD),atmospheric pressure (APCVD),and rapid thermal chemical vapor deposition (RTCVD). The generic issues and the recent improvements are addressed with the specific process. Further,the characteristic of each process is compared relevant to the application in devices. |
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| Keywords: | SiGe epitaxy MBE UHV/CVD APCVD RTCVD |
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