| VDMOSFET的终端优化设计 |
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| 引用本文： | 孙嘉兴,杨颖,林爽.VDMOSFET的终端优化设计[J].辽宁大学学报(自然科学版),2006,33(3):228-231. |
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| 作者姓名： | 孙嘉兴 杨颖 林爽 |
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| 作者单位： | 辽宁大学,物理系,辽宁,沈阳,110036 |
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| 摘 要： | 主要介绍了VDMOSFET的终端优化设计，讨论了已有终端结构中的场环、场板技术，工作原理，以一种新型的高频VDMOSFET与模拟栅相结合的结构为例，详细讨论了场板在减少反馈电容、提高器件的击穿电压、降低导通电组、改善跨导、提高输出电阻、改进安全工作区方面的理论机制及作用。
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| 关 键 词： | VDMOSFET 结终端 击穿电压 |
| 文章编号： | 1000-5846（2006）03-0228-04 |
| 收稿时间： | 2005-11-25 |
| 修稿时间： | 2005-11-25 |
The Design of VDMOSFET Junction Temination Optimization |
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| SUN Jia-xing,YANG Ying,LIN Shuang.The Design of VDMOSFET Junction Temination Optimization[J].Journal of Liaoning University(Natural Sciences Edition),2006,33(3):228-231. |
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| Authors: | SUN Jia-xing YANG Ying LIN Shuang |
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| Institution: | Department of Physics, Liaoning University, Shenyang 110036, China |
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| Abstract: | In this paper,the junction termination technology optimization of the vertical double-diffusion metal-oxide-semiconductor field effect transistor(VDMOSFET) is described. The operation principle of the field plate, the field limiting ring in the existed termination technology is analysed. And taking a novel high-frequence VDMOSFET structure with a dummy-gate for example,this paper discussing the theory and function of the field plate in lowering the feedback capacitance,raising the device breakdown voltage, lowering the on-state resistance, improving the transconductance, increasing the output resistance and improving the safe operating area(SOA). |
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| Keywords: | VDMOSFET junction temination breakdown voltage |
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