| 双极晶体管导通状态对功率纵向双扩散MOSFET静态电流—电压特性的影响 |
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| 引用本文： | 高嵩.双极晶体管导通状态对功率纵向双扩散MOSFET静态电流—电压特性的影响[J].辽宁大学学报(自然科学版),2001,28(4):336-339,348. |
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| 作者姓名： | 高嵩 |
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| 作者单位： | 辽宁大学物理系 |
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| 摘 要： | 通过对DVMOS结构器件测量的I-V特性和模拟结果的分析，发现在此结构中，寄生的双极管对器件性能具有不良影响，可以来用一种新型的具有浅扩散p^ 区的自对准VDMOS结构，以完全消除寄生的BJT导通机制，这对MOS技术的发展十分有益。
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| 关 键 词： | 功率纵向双扩散MOSFET 双极晶体管 电流－电压特性 半导体器件 VDMOS结构 导通状态 VDMOSFET |
| 文章编号： | 1000-5846(2001)04-336-04 |
Effect of Bipolar Turn-On on the Static Current-Voltage Characteristics of Power Vertical Double Diffused MOSFET |
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| GAO Song,SHI Guangyuan,ZHANG Ying,ZHAO Ye.Effect of Bipolar Turn-On on the Static Current-Voltage Characteristics of Power Vertical Double Diffused MOSFET[J].Journal of Liaoning University(Natural Sciences Edition),2001,28(4):336-339,348. |
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| Authors: | GAO Song SHI Guangyuan ZHANG Ying ZHAO Ye |
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| Institution: | GAO Song,SHI Guangyuan,ZHANG Ying,ZHAO Ye Department of Physics,Liaoning University,Shenyang 110036 China |
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| Abstract: | By the analysis on the measured I-V character and simulation result of VDMOS structure device, the effect of the parasitc bipodar transistor inherent in the structure is discussed. A novel self aligned VDMOS structure with a shallow diffused p +region is presented to eliminate the effect completely. The new structure is very useful for the development of MOS technology. |
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| Keywords: | Vertical Double Diffused MOSFET BJT I V characteristics |
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