3CCM硅磁敏三极管工作机理

本文首次指出3CCM硅磁敏三极管的磁敏效应是载流子双注入效应和霍耳效应的结合。反向偏置的收集结允许空穴和阻挡电子通过。积累在收集结附近的电子产生霍耳电场。霍耳电场和劳仑兹力对空穴产生同一方向的作用力,所以这种磁敏管的磁敏电流的线性度和灵敏度都比较高。

The Principle of Operation of 3CCM Silicon Magnetic Field Sensitive Transistors

The 3CCM silicon magnetotransistor effect is a combination of two phenomena, viz., the double injection of carriers and the Hall effect. The reverse-biased collector junction allows holes to pass it, but does not allow electrons to pass it. The electrons accumulated at the collector junction produce a Hall electric field. The Hall electric field and the Lorentz force produce forces in the same direction upon the holes. Therefore, both the linearity and the sensitivity of the magnetic field sensitive current of the 3CCM transistors are very high.