Photoinduced effects in amorphous semiconductor Ge(S, Se)2 chalcogenide films

The blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S, Se)₂ chalcogenide films with light illumination. The shift in well-annealed films could be recovered by annealing the films near the glass-transition temperature again. The photocrystallization was also observed in amorphous Ge(S,Se)₂ films with light illumination by the transmitting electron microscope measurement. The photoinduced phenomina of the amorphous Ge(S,Se)₂ films could be applied to designing some new kinds of optical storage materials.