Scalable synthesis of A2S3 （A=Sb, Bi） submicro/nanowires using their powders via solvothermal proceeding

One-dimensional (1D) nanostructural materials of semiconductors are being widely studied due to their unusual opto-electronic properties and potential im-plementation as nanodevices1―6]. The nanowires of A2S3 (A=Sb, Bi) are one of the most interesting 1…

Scalable synthesis of A2S3 (A=Sb, Bi) submicro/nanowires using their powders via solvothermal proceeding

Single-crystal A2S3 (A=Sb, Bi) nanowires were successfully prepared via using their powders as precursors by solvothermal proceeding. The reac-tion temperature and time as well as solvent strongly influence final A2S3 crystalline morphology and size. Experimental results show that Sb2S3 rods prepared in ethylene glycol are thicker than its wires with av-erage diameter of 400 nm prepared in the mixture solvent of ethylene glycol and ethylenediamine at 200 oC for 24 h. However, under the same reaction con-dition, uniform submicrowires of Bi2S3 with average diameter of 150 nm can be obtained. When reaction temperature is decreased to 150 oC and reaction time is 40 h, pure Sb2S3 wires cannot be prepared. The possible mechanism is briefly discussed for the transformation of the Sb2S3 powders to their wire-like crystals.