| Pt-ZnO纳米肖特基接触的电学特性 |
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| 引用本文： | 邵铮铮,张学骜,王晓峰,常胜利.Pt-ZnO纳米肖特基接触的电学特性[J].中国科学(G辑),2009,39(11):1619-1622. |
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| 作者姓名： | 邵铮铮 张学骜 王晓峰 常胜利 |
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| 作者单位： | 国防科技大学理学院物质与材料科学实验中心, 长沙 410073 |
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| 基金项目： | 国家高技术研究发展计划资助项目(编号: 2009AA01Z114) |
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| 摘 要： | 我们研究了Pt-ZnO纳米肖特基接触的电学特性。采用二步湿化学法制备高取向的ZnO纳米棒阵列，在原子力显微镜下将镀Pt导电探针施加在ZnO纳米棒的端面，形成Pt-ZnO纳米接触。I-V特性曲线表明Pt-ZnO纳米接触形成肖特基二极管，具有明显的整流效应，理想因子为3.2，反向击穿电压高于-10V。分析指出，施加偏压后在Pt-ZnO纳米接触点附近的ZnO半导体内形成较高电场，导致势垒厚度减小，使电子从ZnO到Pt的隧穿概率增大，因而具有较高的理想因子。
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| 关 键 词： | ZnO纳米棒 肖特基接触 理想因子 |
| 收稿时间： | 2009-06-12 |
| 修稿时间： | 2009-06-30 |
Electrical characteristics of Pt-ZnO Schottky nano-contact |
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| Authors: | SHAO ZhengZheng ZHANG XueAo WANG XiaoFeng ＆ CHANG ShengLi |
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| Institution: | (Center of Materials Science, College of Science, National University of Defense Technology, Changsha 410073, China) |
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| Abstract: | Electrical characteristics of Pt-ZnO Schottky nano-contact were studied. Well aligned ZnO nano- rods array was synthesized by two-step of wet-chemical method. Pt coated conducting tip of atomic force microscope was placed on the head face of ZnO nanorod, which formed Pt-ZnO nano-contact. I-V curve showed Pt-ZnO nano-contact exhibited rectifying effect, like Schottky diode with an ideality factor of 3.2 and a reverse-bias breakdown voltage more than -10V. The study suggested a high electric field was induced on the ZnO beneath the contact point when a bias voltage was applied, hence, the Schottky barrier thickness decreased, resulting in easy tunneling across Pt-ZnO interface and large ideality factor. |
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| Keywords: | ZnO nanorod Schottky contact ideality factor |
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