| 对接沟道NMOS结构击穿特性的二维数值分析 |
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| 引用本文： | 徐维锋,刘三清,应建华,曹广军.对接沟道NMOS结构击穿特性的二维数值分析[J].华中科技大学学报(自然科学版),1998(1). |
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| 作者姓名： | 徐维锋 刘三清 应建华 曹广军 |
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| 作者单位： | 华中理工大学固体电子学系!430074(徐维锋，刘三清，应建华)，DeMontfortUniversity(曹广军) |
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| 摘 要： | 对VDMOS－NMOS兼容集成结构击穿时的电场特性进行了二维数值模拟，模拟结果分析表明：在适当的器件几何尺寸与制造工艺条件下，对接NMOS的对接区域对VDMOS－NMOS兼容结构的击穿特性影响很小，对接沟道NMOS结构可以较好地实现VDMOSFET与p阱NMOS电路的兼容集成．同时通过原理性实验对模拟结果进行了验证．
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| 关 键 词： | 功率集成电路 VDMOS 数值模拟 电场分布 |
Two-Dimensional Numerical Analysis for Breakdown Characteristics in Butt-Joint Channel NMOS Structure |
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| Xu Weifeng, Liu Sanqing, Yin Jianhua, Cao Guangjun.Two-Dimensional Numerical Analysis for Breakdown Characteristics in Butt-Joint Channel NMOS Structure[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1998(1). |
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| Authors: | Xu Weifeng Liu Sanqing Yin Jianhua Cao Guangjun |
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| Institution: | Xu Weifeng; Liu Sanqing; Yin Jianhua; Cao Guangjun |
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| Abstract: | For a typical VDMOS-NMOS compatible power integrated circuit structure, using numerical simulation, the two-dimensional distributions of the electric potential and electric field at breakdown are given. The results show that the butt-joint region in BJNMOS has little effect on the breakdown voltage. Therefore VDMOS cells and p-well NMOS IC can be compatibly integrated into one chip with the BJNMOS structure with proper technological parameters and geometrical dimensions.The simulation results are testified by analogy experiment. |
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| Keywords: | power IC VDMOS numerical simulation electric field distribution |
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