| 铟掺杂一维半导体氧化锌纳米螺旋制备及表征 |
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| 引用本文： | 李建军,齐怀琴.铟掺杂一维半导体氧化锌纳米螺旋制备及表征[J].高师理科学刊,2009,29(6):50-53. |
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| 作者姓名： | 李建军 齐怀琴 |
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| 作者单位： | 1. 齐齐哈尔大学,理学院,黑龙江,齐齐哈尔,161006
2. 齐齐哈尔大学,通信与电子工程学院,黑龙江,齐齐哈尔,161006 |
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| 基金项目： | 黑龙江省教育厅科学技术研究项目 |
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| 摘 要： | 利用化学气相沉积的方法,在硅衬底上生长了铟掺杂的氧化锌纳米螺旋结构.通过X-射线衍射仪、扫描电子显微镜、透射电子显微镜、选区电子衍射等手段对样品的形貌和结构进行了表征.结果表明,合成的纳米螺旋由纳米带旋转而成,曲率半径为几个微米.纳米带宽约200 nm,厚约几十纳米,铟杂质的引入使其生长方向沿(1010)方向.
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| 关 键 词： | 纳米结构 氧化锌 化学气相沉积 |
Synthesis and characterization of one-dimensional semiconductor zinc oxide nanospiral |
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| LI Jian-jun,QI Huai-qin.Synthesis and characterization of one-dimensional semiconductor zinc oxide nanospiral[J].Journal of Science of Teachers＇College and University,2009,29(6):50-53. |
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| Authors: | LI Jian-jun QI Huai-qin |
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| Institution: | LI Jian-jun1,QI Huai-qin2(1.School of Science,Qiqihar University,Qiqihar161006,China,2.School of Communication and Electronic Engineering,China) |
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| Abstract: | Indium-doped zinc oxide nanospirals were synthesized on silicon substrates by chemical vapor deposition.The morphologies and structures of the samples were characterized by X-ray diffraction,scanning electron microscopy,and high resolution transmission electron microscopy.The nanometer materials was formed by the whirler of the nanometer band and the curvature radius was several micrometers.The width of nanometer band was about 200 nm and the thickness was dozens of nanometers,the growth direction was(101 0... |
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| Keywords: | nanostructure zinc oxide chemical vapor deposition |
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