| 考虑量子化效应的MOSFET栅电容减小模型 |
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| 引用本文： | 代月花,陈军宁,柯导明,吴秀龙,徐超.考虑量子化效应的MOSFET栅电容减小模型[J].中国科学技术大学学报,2006,36(3):333-337. |
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| 作者姓名： | 代月花 陈军宁 柯导明 吴秀龙 徐超 |
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| 作者单位： | 安徽大学电子科学与技术学院,安徽,合肥,230039 |
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| 基金项目： | 中国科学院资助项目;安徽省自然科学基金 |
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| 摘 要： | 基于改进后的三角势阱近似和n型多晶硅的耗尽以及MOSFET的强反型的情况,建立了一个考虑量子效应的栅电容模型.分别对反型层电容和耗尽层电容进行定义、分析和计算,给出了MOSFETs栅电容解析表达式,并与数值模拟结果进行了比较.结果表明该模型是基于物理的解析模型,具有相当精度,便于电路模拟与设计.
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| 关 键 词： | 量子效应 栅电容 反型层电容 耗尽层电容 表面电场 金属-氧化物-半导体场效应管 |
| 文章编号： | 0253-2778(2006)03-0333-05 |
| 收稿时间： | 06 3 2004 12:00AM |
| 修稿时间： | 12 5 2004 12:00AM |
Modeling of reduced gate capacitance of MOSFETs accounting for quantum effects |
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| DAI Yue-hua,CHEN Jun-ning,KE Dao-ming,WU Xiu-long,XU Chao.Modeling of reduced gate capacitance of MOSFETs accounting for quantum effects[J].Journal of University of Science and Technology of China,2006,36(3):333-337. |
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| Authors: | DAI Yue-hua CHEN Jun-ning KE Dao-ming WU Xiu-long XU Chao |
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| Institution: | School of Electronic Science and Technology, Anhui University, Hefei 230039, China |
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| Abstract: | Based on the approximation of modified triangular potential well and polysilicon gate depletion effects,a new gate capacitance model of strong inversion MOSFETs(metal-oxide-semiconductor field effect transistors) that took quantum effects into account was presented.First,inversion layer capacitance and depletion layer capacitance were defined,analyzed and calculated,respectively.Then the expression of effect gate capacitance was described analytically.The reasonable agreement of the calculated results with the simulation ones prove the precision of the physically based analytical model of gate capacitance,making it easily applicable to circuit simulation and design. |
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| Keywords: | quantum effects gate capacitance inversion layer capacitance depletion layer capacitance surface electrical field MOSFET |
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