| 低噪声场放及其应用 |
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| 引用本文： | 贾振义.低噪声场放及其应用[J].河北大学学报(自然科学版),1985(2). |
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| 作者姓名： | 贾振义 |
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| 作者单位： | 河北大学电子系 |
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| 摘 要： | 本文描述了微波低噪声砷化镓场效应晶体管放大器的设计及其应用.该放大器是由两个低噪声砷化镓场效应晶体管C×50B组成,制作在金属化了的聚四氟乙烯介质板上,并装在一个100×60×40mm~3的盒里。放大器的性能指标是:频率范围2.7GHz～3GHz,增益≥20db,噪声系数包括混频器≤1.8db。
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LOW-Noise Desigre of Microvave GaAs FET Amplifier and 1ts Applications |
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| Abstract: | This paper describes a low-noise design of microvave GaAs F E T amplifiers and its applications. This amplifier comprises two low-noise GaAs FET transistors cx50 B mounted on a metallized dielectric plate placed in an enclosure (100X60X40mm3). With this amplifier, have the following characteristics,
-frequency band 2.7-3GHz
--average gain ≥20db
-overall noise figure, followed by an mixer ≤1.8db |
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