| 射频磁控溅射制备c轴取向LiNbO3薄膜研究 |
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| 引用本文： | 安玉凯,左长云,刘技文.射频磁控溅射制备c轴取向LiNbO3薄膜研究[J].天津理工大学学报,2011,27(4):1-4. |
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| 作者姓名： | 安玉凯 左长云 刘技文 |
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| 作者单位： | 天津理工大学天津市光电显示材料与器件重点实验室,天津,300191 |
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| 基金项目： | 天津市科技计划项目(10SYSYJC28100) |
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| 摘 要： | 采用射频磁控溅射技术,用富Li的LiNbO3靶材在Si(100)和Si(111)基底上制备了LiNbO3薄膜.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱(XPS)对LiNbO3薄膜的结晶程度、晶体取向和表面形貌及薄膜与基底结合处的界面结构进行了研究.结果表明:样品在空气中经1 000℃退火1 h处理后,薄膜与Si基底界面处有SiO2生成,得到的LiNbO3薄膜结晶性好,具有高c轴取向,晶粒排列致密且粒径尺寸均匀.
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| 关 键 词： | LiNbO3薄膜 c轴取向 射频磁控溅射 |
The preparation of highly c-axis oriented LiNbO3 thin film by rf-sputtering |
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| AN Yu-kai,ZUO Chang-yun,LIU Ji-wen.The preparation of highly c-axis oriented LiNbO3 thin film by rf-sputtering[J].Journal of Tianjin University of Technology,2011,27(4):1-4. |
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| Authors: | AN Yu-kai ZUO Chang-yun LIU Ji-wen |
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| Institution: | AN Yu-kai,ZUO Chang-yun,LIU Ji-wen(Tianjin Key Laboratory for Photoelectric Materials and Devices,Tianjin University of Technology,Tianjin 300191,China) |
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| Abstract: | LiNbO3 thin films were grown on Si substrates by radio-frequency(RF) magnetron sputtering technique with a LiNbO3 with Li-riched target.The crystallization,crystalline orientation and surface morphology of the films were characterized with X-ray diffraction(XRD),scanning electron microscopy(SEM).The interface between LiNbO3 film and Si substrate was investigated by X-ray photoelectron spectroscopy(XPS).The results show that the films have highly c-axis oriented texture,uniform grain size and a smooth,crack-... |
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| Keywords: | LiNbO3 thin film c-axis orientation rf-sputtering |
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