热氧化法制备 TiO2薄膜电极及其光电流性能

采用热氧化钛片的方法制备了TiO2薄膜电极，然后利用X射线衍射（XRD）、扫描电子显微镜（SEM）、荧光光致发光（PL）、拉曼光谱（Raman）、光电流和光电压等实验技术进行表征，考察了不同热处理温度对薄膜的形貌、晶相结构、光学性质和光电流性能等的影响．结果表明：随着热处理温度由3000C提高到600℃，在钛片表面上逐步生成晶粒细小、多孔且荧光强度逐渐降低的纯金红石TiO2薄膜，并可获得分别为0．154mA／cm2和0．3V的最大阳极光电流和光电压，而继续增大热处理温度虽有助于氧化膜的形成，但光电流和光电压则急剧减小．因该热处理方法具有操作简单、生成的表面膜与基底的附着性好且光电性能稳定等特点，使其在TiO2膜电极制备方面有较好的应用前景．

Preparation of TiO2 film electrode using thermal oxidation method and its photocurrent properties

TiO2 film electrodes were fabricated by thermal oxidation method on pure titanium sheets,and then the effects of the annealing temperatures on their morphology,phase composition,optical properties,and photocurrent were characterized by using X-ray diffraction(XRD),scanning electron microscope(SEM),photoluminescence(PL) and Raman spectra,and photocurrent and photovoltage techniques.The results show that pure rutile TiO2 films with small grain,porous morphology,and lower fluorescence intensity were formed with the increasing of annealing temperature from 300℃ to 600℃.The film electrode prepared at 600℃ exhibited the maximum photocurrent and photovoltage,i.e.0.154 mA/cm2 and 0.3 V,while the photocurrent and photovoltage decreased sharply with higher annealing temperatures although the higher temperatures were beneficial to the formation of TiO2 film.This thermal oxidation method provides a promising process for the preparation of TiO2 film electrodes due to its simple process,excellent adhesion of film with substrate,and stable photoelectric performances.