| 反应气压对氢化非晶氮化硅薄膜的发光特性影响 |
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| 引用本文： | 朱海丰,杨彦斌,路万兵,于威.反应气压对氢化非晶氮化硅薄膜的发光特性影响[J].河北大学学报(自然科学版),2004,24(3):247-250. |
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| 作者姓名： | 朱海丰 杨彦斌 路万兵 于威 |
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| 作者单位： | 河北大学,物理科学与技术学院,河北,保定,071002 |
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| 基金项目： | 河北省自然科学基金资助项目(100064) |
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| 摘 要： | 采用螺旋波等离子体增强化学气相沉积(HWP-CVD)技术制备了氢化非晶氮化硅(a-SiNx:H)薄膜,利用光致发光谱(PL)和傅里叶红外吸收谱(FTIR)研究了不同气压条件下所形成薄膜的发光特性.结果表明,在较高气压条件下,所沉积薄膜的发光峰位在2.5 eV附近;减小气压使薄膜的沉积速率下降,其内部原子微观结构发生变化,薄膜的发光峰位在3.05 eV处,其半高宽为1.48 eV.
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| 关 键 词： | 氢化非晶氮化硅 光致发光 反应气压 |
| 文章编号： | 1000-1565(2004)03-0247-04 |
| 修稿时间： | 2003年11月2日 |
Influence of Gas Pressure on Luminescent Properties of a - SiNx :H Films |
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| ZHU Hai-feng,YANG Yan-bin,LU Wan-bing,YU wei.Influence of Gas Pressure on Luminescent Properties of a - SiNx :H Films[J].Journal of Hebei University (Natural Science Edition),2004,24(3):247-250. |
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| Authors: | ZHU Hai-feng YANG Yan-bin LU Wan-bing YU wei |
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| Abstract: | Hydrogenated amorphous silicon nitride films (a-SiN_x:H) are deposited by helicon wave plasma enhanced chemical vapor deposition (HWP-CVD) at different gas pressures. The luminescence feature and bonding characteristics of the deposited films have been studied by photoluminescence (PL) spectroscopy and Fourier transform infrared spectroscopy (FTIR). The results show that the dominant PL peak of the films prepared at the gas pressure of 2.5 Pa is located at 2.5 eV; The deposition rate of the films decreased and the atomic microstructures of the films have been changed when the gas pressure is decreased to 0.5 Pa. The main PL peak with the full width at half maximum (FWHM) of 1.48 eV is presented at about 3.05 eV. |
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| Keywords: | hydrogenated amorphous silicon nitride photoluminescence gas pressure |
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